Chemical mechanical polishing pad conditioner and manufacturing method thereof

ABSTRACT

A chemical mechanical polishing pad conditioner includes a bottom substrate, an intermediate substrate and a diamond film. The intermediate substrate is arranged on the bottom substrate; the intermediate substrate includes a hollow portion and an annular portion surrounding the hollow portion; the annular portion includes a plurality of first polishing areas arranged at intervals along an annular area and a plurality of second polishing areas arranged among the first polishing areas; and the first polishing areas extend along a radial direction on the intermediate substrate. The diamond film is arranged on the intermediate substrate, and the diamond film overlays the first polishing areas and the second polishing areas. The diamond film is provided with a plurality of first surfaces and a plurality of second surfaces, and first polishing tips protruding from the first surfaces and second polishing tips protruding from the second surface are formed on the diamond film.

FIELD OF THE INVENTION

The present invention relates to a conditioner, and particularly to achemical mechanical polishing pad conditioner and a manufacturing methodthereof.

BACKGROUND OF THE INVENTION

In a manufacturing process of semiconductor wafers, a chemicalmechanical polishing process is carried out to flatten wafer surfaces,in which a polishing pad fixed on a rotating platform is used to contactand polish the wafer. During polishing, debris and polishing slurry maybe accumulated in holes of the polishing pad, which may wear thepolishing pad and reduce the performance. Therefore, conditioners has tobe used to remove the debris and polishing slurry accumulated in thepolishing pad.

The known chemical mechanical polishing pad dress is generallyclassified into two types: one type adopts diamond particles as apolishing material, and the other type adopts a chemical vapordeposition (CVD) diamond film as a polishing material.

For the chemical mechanical polishing pad conditioner adopting the CVDdiamond film as the polishing material, in the prior art, as provided inTaiwan Patent Publication No. TW200948533, a CVD diamond coating issmeared on a substrate consisting of a ceramic material and a materialformed preferably by unreacted carbides, and the regulating part has apredictable or unpredictable convex surface characteristic structure tofacilitate the use of the regulating part. The convex surfacecharacteristic structure includes a concentric ring, a discontinuous orstaggered concentric ring, spiral, discontinuous spiral, rectangles,discontinuous rectangles, etc.

Further, Taiwan Patent Publication No. TW201805117 previously filed bythe applicant discloses a chemical mechanical polishing conditioner,which includes a bottom substrate, an intermediate substrate and apolishing layer. The intermediate substrate is arranged on the bottomsubstrate, and the intermediate substrate includes a hollow portion, anannular portion surrounding the hollow portion and at least oneprojecting ring away from the bottom substrate and protruding from theannular portion. The projecting ring includes a plurality of bumpsarranged to be spaced apart from each other along an annulus region. Thebumps extend in a radial direction of the intermediate substrate. Adiamond film is arranged on the intermediate substrate to form aplurality of polishing bumps with the bumps. The polishing bumps mayhave a flat top surface and may also have a rough top surface.

For another example, a chemical mechanical flattened polishing padconditioner provided by Taiwan Patent Publication No. TW201249595includes a substrate provided with a first set of projections and asecond set of projections. The first set of projections has a firstaverage height, and the second set of projections has a second averageheight different from the first average height. Tops of the first set ofprojections and the second set of projections are respectively providedwith a layer of polycrystalline diamond. In the description, a remotesurface of one or more projections in the first set of projections mayhave an irregular or rough surface, and the remote surface of eachprojection in the second set of projections may have an irregular orrough surface. However, in other embodiments, the top of one or moreprojections in the first set of projections may have a flat surface, andthe top of each projection in the second set of projections may have aflat surface.

The chemical mechanical polishing pad conditioner adopting the CVDdiamond film as the polishing material may be further combined withpolishing particles. For example, Taiwan Patent Publication No.TW201630689 filed previously by the applicant discloses a chemicalmechanical polishing conditioner, which includes a substrate beingcircular. A surface of the substrate is divided into a central surfaceand an outer surface. The center surface is recessed to form a recessedpart. The outer surface encompasses the central surface and is recessedto form a plurality of mounting holes. A plurality of sliding blocks arearranged on the outer surface and distributed among the mounting holes.Each sliding block has a sliding dressing surface. In addition, thechemical mechanical polishing conditioner is further provided with aplurality of abrasive bars that are correspondingly arranged in themounting holes. The abrasive bar includes a bar body and an abrasiveparticle on the top surface of the bar body.

Although it is mentioned in the prior arts that the polishing bump mayhave a rough top surface, the rough top surface is not further definedor described. In the description of Taiwan Patent Publication No.TW201249595, it is merely mentioned that the roughness or irregularsurface at the distal surfaces of the protrusions can be attributed atleast in part to the roughness from a porous graphite substrate that wasconverted to silicon carbide; and moreover, whether the top surface isrough or not is only one of the implementation, and the top surface maybe flat in other embodiments. Apparently, the shape of the top surfaceof the polishing bump is not a technical focus of the prior art.

In Taiwan Patent No. TW467802, a conditioner for polishing pad andmethod for manufacturing the same are mentioned. The conditionerincludes a substrate with a plurality of geometric protrusions on atleast one side thereof, and a diamond layer with uniformed thicknessgenerally formed on a whole surface of the side edge of the substratewith the geometric protrusions. The geometric protrusion has a flatupper surface or an upper surface including a plurality of smallgeometric projections formed by concave toothed grooves.

The intermediate substrate of the chemical mechanical polishingconditioner disclosed in Taiwan Patent No. TWI616279 includes a hollowportion, an annular portion surrounding the hollow portion and at leastone projecting ring away from the bottom substrate and protruding fromthe annular portion. The projecting ring includes a plurality of bumpsarranged to be spaced apart from each other along an annulus region. Adiamond film is arranged on the intermediate substrate, and the diamondfilm forms a plurality of abrasive projections.

Even if the above prior arts improve the top surface of the conventionalchemical mechanical polishing conditioner such that a plurality of bumpsare formed as a specific shape to achieve effects such as consistentpolishing or cutting speed, enhanced removal capacity, etc. However, inpractical application, the residual debris in small holes of thepolishing pad still cannot be removed effectively, which affects thelife time of the chemical mechanical polishing conditioner.

SUMMARY OF THE INVENTION

The present invention provides a chemical mechanical polishing padconditioner, which can effectively remove impurities or debris of achemical mechanical polishing pad, and improve the service life of thechemical mechanical polishing conditioner.

The present invention provides a manufacturing method of the chemicalmechanical polishing pad conditioner, which can effectively removeimpurities or debris of a chemical mechanical polishing pad, and improvethe life time of the chemical mechanical polishing conditioner.

The chemical mechanical polishing pad conditioner includes a bottomsubstrate; an intermediate substrate arranged on the bottom substrate,wherein the intermediate substrate includes a hollow portion and anannular portion surrounding the hollow portion, the annular portionincludes a plurality of first polishing areas arranged at intervalsalong an annular area and a plurality of second polishing areas arrangedbetween the first polishing areas, and the first polishing areas extendalong a radial direction on the intermediate substrate; and a diamondfilm arranged on the intermediate substrate, wherein the diamond filmoverlays the first polishing areas and the second polishing areas, thediamond film is provided with a plurality of first surfaces and aplurality of second surfaces, the first surfaces overlay the firstpolishing areas, and the second surfaces overlay the second polishingareas; the diamond film is formed with a plurality of first polishingtips protruding from the first surfaces and a plurality of secondpolishing tips protruding from the second surfaces; the first polishingtip has a first tip height, and the second polishing tip has a secondtip height; the first polishing areas have surface roughness between 1μm and 50 μm according to the shape of the first polishing tips; and thesecond polishing areas have surface roughness ranged between 1 μm and 50μm according to the shape of the second polishing tips.

A manufacturing method of the chemical mechanical polishing padconditioner of the present invention includes the following steps:

providing an intermediate substrate, wherein the intermediate substrateincludes a hollow portion and an annular portion surrounding the hollowportion, the annular portion includes a plurality of first polishingareas arranged at intervals along an annular area and a plurality ofsecond polishing areas arranged between the first polishing areas, andthe first polishing areas extend along a radial direction on theintermediate substrate; and forming a diamond film on the intermediatesubstrate, wherein the diamond film overlays the first polishing areasand the second polishing areas, the diamond film is provided with aplurality of first surfaces and a plurality of second surfaces, thefirst surfaces overlay the first polishing areas, and the secondsurfaces overlay the second polishing areas; the diamond film is formedwith a plurality of first polishing tips protruding from the firstsurfaces and a plurality of second polishing tips protruding from thesecond surfaces; the first polishing tips have a first tip height, andthe second polishing tips have a second tip height; the first surfaceshave surface roughness between 1 μm and 50 μm according to the shape ofthe first polishing tips; the second surfaces have surface roughnessbetween 1 μm and 50 μm according to the shape of the second polishingtips; and arranging the intermediate substrate on a bottom substrate.

The chemical mechanical polishing pad conditioner of the presentinvention forms a plurality of first polishing tips on the diamond film,and a plurality of second polishing tips are formed on the secondpolishing area. Compared with the conventional conditioners, theuniformity of the chemical mechanical polishing pad conditioner of thepresent invention is improved. When the chemical mechanical polishingpad conditioner with good uniformity performs the dressing, the residualdebris even in small holes can also be removed successfully. Therefore,the removal rate can be improved. Combined with the above advantages,the life time of the chemical mechanical polishing pad conditioner ofthe present invention is prolonged.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view of a chemical mechanical polishing pad conditioneraccording to a first embodiment of the present invention.

FIG. 2A is a schematic sectional view along an A-A′ direction of FIG. 1.

FIG. 2B is a schematic sectional view along a B-B′ direction of FIG. 1.

FIG. 2C is a schematic sectional view of the chemical mechanicalpolishing pad conditioner according to an embodiment of the presentinvention.

FIG. 3A is a partial perspective view of FIG. 1.

FIG. 3B is a partial perspective view of the chemical mechanicalpolishing pad conditioner according to an embodiment of the presentinvention.

FIG. 4A is a top view of the chemical mechanical polishing padconditioner according to a second embodiment of the present invention.

FIG. 4B is a schematic sectional view along a C-C′ direction of FIG. 4A.

FIG. 5 is a top view of the chemical mechanical polishing padconditioner in another form according to the second embodiment of thepresent invention.

FIG. 6 is a top view of the chemical mechanical polishing padconditioner according to a third embodiment of the present invention.

FIG. 7 is a schematic diagram of the chemical mechanical polishing padconditioner according to an embodiment of the present invention.

FIG. 8 is a schematic diagram of the chemical mechanical polishing padconditioner according to an embodiment of the present invention.

FIG. 9 is flow chart of a manufacturing method of the chemicalmechanical polishing pad conditioner according to an embodiment of thepresent invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The foregoing and other technical contents, characteristics and effectsof the present invention may be clearly presented in the followingdetailed description of a preferred embodiment with reference to thedrawings. Directional terms mentioned in the following embodiments, suchas upper, lower, left, right, front or rear, etc., are only directionsreferring to the attached drawings. Therefore, the directional termsused herein are used for description rather than limiting the presentinvention.

First Embodiment

FIG. 1, FIG. 2A and FIG. 2B respectively show a top view, a schematicsectional view along line A-A′ and a schematic sectional view along lineB-B′ of a chemical mechanical polishing pad conditioner 1 according to afirst embodiment of the present invention.

The chemical mechanical polishing pad conditioner 1 of the presentinvention includes a bottom substrate 10, an intermediate substrate 20and a diamond film 30. The intermediate substrate 20 is arranged on thebottom substrate 10. The diamond film 30 overlays the intermediatesubstrate 20.

The intermediate substrate 20 includes a hollow portion 21 and anannular portion 22 surrounding the hollow portion 21. The annularportion 22 includes a plurality of first polishing areas 221 arranged atintervals along an annular area and a plurality of second polishingareas 222 arranged between the first polishing areas 221.The firstpolishing area 221 extends along a radial direction of the intermediatesubstrate 20. The first polishing areas 221 include a plurality of firsttips 221 a, and the second polishing areas 222 include a plurality ofsecond tips 222 a.

As shown in FIG. 2A and FIG. 2B, in the present embodiment, the diamondfilm 30 is formed on the intermediate substrate 20. The diamond film 30overlays the first polishing areas 221 and the second polishing areas222.A plurality of first polishing tips 311 protruding from the firstsurfaces 31 are formed on the diamond film 30. A plurality of secondpolishing tips 321 protruding from the second surfaces 32 are formed onthe second surface 32. In the present embodiment, the first polishingtip 311 and the second polishing tip 321 are formed by covering theintermediate substrate 20 with the diamond film 30. The first polishingtips 311 have a first tip height H1, and the second polishing tips 321have a second tip height H2. The diamond film 30 is formed on theintermediate substrate 20. The diamond film 30 overlays the firstpolishing areas 221. In the present embodiment, the first polishingareas 221 have a surface roughness between 1 μm and 50 μm which maybeadjustable according to the shape of the first polishing tips 311. Thesecond polishing areas 222 have a surface roughness between 1 μm and 50μm which maybe adjustable according to the shape of the second polishingtips 321. The detail of the structure is described below.

In an embodiment of the present invention, the surface roughness of thefirst polishing area 221 is greater than, equal to or less than thesurface roughness of the second polishing area 222. In an embodiment ofthe present invention, the surface roughness of the single firstpolishing area 221 includes at least two subsets of ranges; and thesurface roughness of the single second polishing area 222 includes atleast two subsets of ranges. For example, the surface roughness of thesingle first polishing area 221 or the single second polishing area 222may include a range of 1 μm to 20 μm and a range of 21 μm to 50 μm. Inan embodiment of the present invention, the surface roughness of thesefirst polishing areas 221 may be the same or different; and the surfaceroughness of these second polishing areas 222 may be the same ordifferent. For example, the surface roughness of some of the firstpolishing areas 221 or the second polishing areas 222 may be between 1μm and 20 μm, and the surface roughness of the other part of the firstpolishing areas 221 or the second polishing areas 222 may be between 21μm and 50 μm. In an embodiment of the present invention, the first tipheight H1 may be greater than, equal to or less than the second tipheight H2.

In an embodiment of the present invention, the first tip height H1 ofthe first polishing tips 311 includes at least two subsets of ranges;and the second tip height H2 of these second polishing tips 321 includesat least two subsets of ranges. In an embodiment of the presentinvention, the first tip height H1 may be the same or different, and thesecond tip height H2 may be the same or different.

In an embodiment of the present invention, the first tip height H1 isbetween 5 μm and 300 μm. In an embodiment of the present invention, thesecond tip height H2 is between 5 μm and 300 μm.

In an embodiment of the present invention, a height difference betweenthe first polishing areas 221 and the second polishing areas 222 may bebetween 1 μm and 300 μm. FIG. 2C is a schematic sectional view of thechemical mechanical polishing pad conditioner according to an embodimentof the present invention. The first polishing areas 221 and the secondpolishing areas 222 are equal in height, that is, the height differenceis 0 μm.

In an embodiment of the present invention, the first polishing area 221is a bump 201. The diamond film 30 overlays the first polishing areas221 and forms a plurality of polishing projections 301 with the bumps201. The adjacent polishing projections 301 are separated from eachother at a distance. The distance may be varied between 1 to 5 times ofa width of the bump 201. In the present embodiment, the polishingprojection 301 is formed in an arc shape with respect to a radialdirection of the intermediate substrate 20. In other words, as shown inFIG. 1, the first polishing area 221 is a curved segment when viewedfrom top. In other embodiments, the shape of the first polishing areas221 may be trapezoid, sector, circle, polygon or other shapes, and thefirst polishing areas 221 may be formed in a radial shape or helicalshape.

The bottom substrate 10 may be a planar substrate or may be a non-planarsubstrate with a groove capable of accommodating the intermediatesubstrate 20. In the present embodiment, as shown in FIG. 1, the bottomsubstrate 10 is provided with a annular accommodating groove 10b forreceiving the intermediate substrate 20. Materials suitable for thebottom substrate 10 may be, for example, stainless steel, metalmaterials, polymer materials, ceramic materials or a combination thereofThe intermediate substrate 20 is arranged on the bottom substrate 10.The material of the intermediate substrate 20 may be conductive siliconcarbide or non-conductive silicon carbide. In an embodiment of thepresent invention, the intermediate substrate 20 is a conductivematerial. The conductive material may be molybdenum, tungsten, tungstencarbide or a combination thereof. In another embodiment of the presentinvention, the intermediate substrate 20 is a non-conductive material.The non-conductive material is silicon or monocrystal aluminum oxide.

In the present embodiment, the intermediate substrate 20 includes ahollow portion 21 and a annular portion 22 surrounding the hollowportion 21. The annular portion 22 is formed with a plurality of bumps201 by a laser machining method. The bumps 201 are arranged along theannular portion 22 to form a first polishing area 221. Optionally, thebumps 201 may be arranged around the hollow portion 21 to form at leastone circle of the first polishing area 221. For example, the bumps mayform 1 to 20 circles of the first polishing area 221, preferably, 2 to20 circles of the first polishing area 221. The present embodimentherein is described by taking 2 circles of the first polishing area 221as an example. At the time, the first circle and second circle of thebumps 201 in the adjacent first polishing areas 221 may be staggered toeach other. In an embodiment of the present invention, the firstpolishing areas 221 are formed as a plurality of circles between 2 and20. In other embodiments, the first polishing areas 221 may also be asingle circle. The shape of the bumps 201 may be trapezoid, sector,circle, polygon or other shapes. In the present embodiment, the bumps201 are formed by the laser machining method. In other embodiments, thebumps 201 may also be formed by electrical discharge machining method, adie casting method or other methods, which is not specifically limitedby the present invention.

In the present embodiment, the diamond film 30 is formed by a chemicalvapor deposition method. The chemical vapor deposition method, forexample, may be filament CVD, Plasma Enhanced Chemical Vapor Deposition(PECVD), Microwave plasma enhanced chemical vapor deposition (MPCVD) orother similar methods. A plurality of polishing projections 301 areformed on the surface of the intermediate substrate 20 along the bumps201 of the intermediate substrate 20.

The surface of the intermediate substrate 20 has a patterned structure.In the present embodiment, the patterned structure is the shape formedby the foregoing tips. The patterned structure may be formed with thebumps 201 in a same process (such as the laser machining method). Thepatterned structure is formed on a top surface of the bump 201 and onthe surface of the annular portion 22 of the intermediate substrate 20where the bump 201 is not formed.

Referring to FIG. 3A, the diamond film 30 is formed according to theshape of the intermediate substrate 20. A top surface 3011 of thepolishing projections 301 forms a shape corresponding to the patternedstructure of the bump 201. thereby defining the first polishing tips311; and the second polishing tips 321 (as shown in FIG. 2A) are definedbetween the polishing projections 301. In an embodiment of the presentinvention, the patterned structure includes a plurality ofthree-dimensional geometrical structure 3012 that are distributedregularly or irregularly. In other embodiments, the geometricalstructure 3012 may be a plurality of regularly or irregularly arrangedtriangular cones, quadrangular cones, pentagonal cones, hexagonal cones,heptagonal cones, octagonal cones, triangular columns, quadrangularcolumns, pentagonal columns, hexagonal columns, heptagonal columns,octagonal columns, cones, cylinders, elliptical cones, ellipticalcolumns or combinations thereof The patterned structure endows the topsurface 3011 of the polishing bump 301 with a centerline averageroughness (Ra) between 2 and 20. In an embodiment of the presentinvention, a first distance D1 is provided between a center point of thegeometrical structure 3012 and a center point of the adjacentgeometrical structure 3012. The first distance D1 is 1 to 8.3 times of awidth D0 of the geometrical structure 3012.

In the present embodiment, the bottom substrate 10 and the intermediatesubstrate 20 are bonded through an adhesive layer 40. The adhesive layer40 may be made of any material with adhesion, such as resin. In otherembodiments, the intermediate substrate 20 may also be fixed on thebottom substrate 10 through a brazing method or a mechanical manner

Referring to FIG. 3A, when the chemical mechanical polishing padconditioner 1 is viewed from top, the first polishing areas 221 formedby a plurality of polishing projections 301 and the second polishingareas 222 formed between every two polishing projections 301 may beseen. The first polishing areas 221 and the second polishing areas 222have a height difference. The first polishing areas 221 are used as amain part for conditioning the polishing pad. The second polishing areas222 are used as a passage for flow out of debris. During theconditioning, the residual debris even in small holes may also beremoved successfully, so that the removal rate can be improved. On theother hand, when a soft polishing pad is dressed, the surface of thesoft polishing pad is not flat. When the soft polishing pad is attachedto the conditioner 1, the second polishing area 222 with a lower planemay effectively serve as an auxiliary part for dressing the polishingpad.

In the present embodiment, the number of the geometrical structures 3012per square millimeter (mm²) on the polishing bump 301 is between 10 and250. The arrangement way of the geometrical structures 3012 on the topsurface 3011 or the second polishing area 222 is not limitedspecifically. For example, as shown in FIG. 3A, two aggregations ofgeometrical structure 303 may be arranged and formed on the top surface3011 of the polishing projections 301. At least one flat area 304 isprovided between the aggregations 303. The flat area 304 does not havethe polishing projection 301. In other embodiments, the top surface 3011may be provided with two or more aggregations 303. In other embodiments,the geometrical structures 3012 are not aggregated to form theaggregation 303, but uniformly distributed on the top surface 3011.

Referring to FIG. 3B, FIG. 3B is a partial perspective view of thechemical mechanical polishing pad conditioner according to an embodimentof the present invention. In the present embodiment, the diamond film 30is formed with aggregations 303 a, 303 b, 303 c and 303 d of differentshapes, wherein the aggregations 303 a and 303 b are formed in the firstpolishing area 221, and the aggregations 303 c and 303 d are formed inthe second polishing area 222.

In an embodiment, the aggregations 303 a and 303 b on the firstpolishing area 221 are bumps with different sizes, as shown in FIG. 3B.On the other hand, the aggregation 303 a on the first polishing area 221and the aggregation 303 c on the second polishing area 222 may have thesame tip height and/or form the same surface roughness, that is, theaggregations 303 a and 303 c are the same; and the aggregation 303 b onthe first polishing area 221 and the aggregation 303 d on the secondpolishing area 222 may have the same tip height and/or form the samesurface roughness, that is, the aggregations 303 b and 303 d are thesame. Or, the aggregation 303 a on the first polishing area 221 and theaggregation 303 c on the second polishing area 222 may have differenttip heights and/or form different surface roughness, that is, theaggregations 303 a and 303 c are different; and the aggregation 303 b onthe first polishing area 221 and the aggregation 303 d on the secondpolishing area 222 may have different tip heights and/or form differentsurface roughness, that is, the aggregations 303 b and 303 d aredifferent.

Second Embodiment

Referring to FIG. 4A, FIG. 4A shows a second embodiment of the chemicalmechanical polishing pad conditioner 1 of the present invention. In thesecond embodiment, except for further including a plurality of polishingunits 50, the structure of the chemical mechanical polishing padconditioner 1 is substantially the same with the first embodiment.

Referring to FIG. 4B, FIG. 4B is a schematic sectional view along lineC-C′ of FIG. 4A. In the chemical mechanical polishing pad conditioner 1of the second embodiment of the present invention, the polishing unit 50includes a supporting rod 51, a polishing particle 52 arranged on thesupporting rod 51, and an abrasive bonding layer 53 used for bonding thesupporting rod 51 and the polishing particle 52. In the secondembodiment, the polishing unit 50 is arranged on a position of thebottom substrate 10 corresponding to the hollow portion 21 of theintermediate substrate 20. Referring to FIG. 5, FIG. 5 is a top view ofthe chemical mechanical polishing pad conditioner 1 of anotherimplementation according to the second embodiment of the presentinvention. The polishing unit 50 is arranged on a peripheral portion 10a of the bottom substrate 10.

FIG. 6 is a schematic diagram of the chemical mechanical polishing padconditioner according to an embodiment of the present invention. In thepresent embodiment, the annular portion 22 includes separated segments22 a, 22 b, 22 c and 22 d spliced adjacent to each other. Compared withthe structure with a single circular shape, a plurality of segments areeasy for mass production, so that the cost may be reduced greatly, andthe production efficiency may be improved. In an embodiment of thepresent invention, the number of the segments is between 2 and 6. In apreferred embodiment, the number of the combined segments is 4.

FIG. 7 is a schematic diagram of the chemical mechanical polishing padconditioner according to an embodiment of the present invention. In thepresent embodiment, the first polishing areas 221 (the bumps 201) of theannular portion 22 is fan-shaped and arranged equidistantly; and FIG. 8is a schematic diagram of the chemical mechanical polishing padconditioner according to an embodiment of the present invention. In thepresent embodiment, the first polishing areas 221 (the bumps 201) of theannular portion 22 are elongated and arranged in a radial shape.Therefore, the chemical mechanical polishing pad conditioner 1 may havedifferent polishing performance. In other embodiments, the bumps 201 maybe configured in more combinations of different shapes and may bearranged as concentric rings, discontinuous or staggered concentricrings, spirals, discontinuous spirals, rectangles, discontinuousrectangles, and etc.

In combination with the above drawings, and referring to FIG. 9, FIG. 9is flow chart of a manufacturing method of the chemical mechanicalpolishing pad conditioner 1. The manufacturing method of the chemicalmechanical polishing pad conditioner 1 includes the following steps:

(S1) an intermediate substrate 20 is provided, wherein the intermediatesubstrate 20 includes a hollow portion 21 and a annular portion 22surrounding the hollow portion 21.

(S2) a diamond film 30 is formed on the intermediate substrate 20,wherein the diamond film 30 overlays the first polishing areas 221 andthe second polishing areas 222, a plurality of first polishing tips 311protruding from the first surfaces 31 and a plurality of secondpolishing tips 321 protruding from the second surfaces 32 are formed onthe diamond film 30.

In an embodiment of the present invention, the annular portion 22 isprovided with a plurality of bumps 201 through energy machining method(such as electrical discharge machining method, and laser machiningmethod) or die casting method. For example, when a conductive materialis used as the intermediate substrate, the electrical dischargemachining method may be used. When a non-conductive material is used asthe intermediate substrate, the laser machining method may be used toform the bumps 201 on the annular portion 22. Furthermore, the diecasting method may also be used directly to obtain the above structureduring the formation. For example, powder is pressed into an expectedshape and then sintered.

(S3) The intermediate substrate 20 is arranged on the bottom substrate10.

In conclusion, according to the chemical mechanical polishing padconditioner 1 of the present invention, a plurality of first polishingtips 311 are formed on the bumps 201, and a plurality of secondpolishing tips 321 are formed on the second polishing area 222. Comparedwith the conventional technologies, the uniformity of the chemicalmechanical polishing pad conditioner 1 of the present invention isimproved. When the chemical mechanical polishing pad conditioner withgood uniformity is used for dressing, the residual debris even in smallholes can also be removed successfully, so that the removal capacity canbe improved. Combined with the above advantages, the life time of thechemical mechanical polishing pad conditioner of the present inventionis prolonged.

What is claimed is:
 1. A chemical mechanical polishing pad conditioner,comprising: a bottom substrate; an intermediate substrate, arranged onthe bottom substrate, wherein the intermediate substrate comprises ahollow portion and a annular portion surrounding the hollow portion, theannular portion comprises a plurality of first polishing areas arrangedat intervals along an annular area and a plurality of second polishingareas disposed between the first polishing areas, and the firstpolishing areas extend along a radial direction on the intermediatesubstrate; and a diamond film, arranged on the intermediate substrate,wherein the diamond film overlays the plurality of first polishing areasand the plurality of second polishing areas, the diamond film isprovided with a plurality of first surfaces and a plurality of secondsurfaces, the plurality of first surfaces overlay the plurality of firstpolishing areas, and the plurality of second surfaces overlay theplurality of second polishing areas; and wherein a plurality of firstpolishing tips protruding from the plurality of first surfaces and aplurality of second polishing tips protruding from the plurality ofsecond surfaces are formed on the diamond film, the plurality of firstpolishing tips have a first tip height, the second polishing tips have asecond tip height, the plurality of first polishing areas have a surfaceroughness between 1 μm and 50 μm according to shapes of the plurality offirst polishing tips, and the plurality of second polishing areas have asurface roughness between 1 μm and 50 μm according to shapes of theplurality of second polishing tips.
 2. The chemical mechanical polishingpad conditioner according to claim 1, wherein the surface roughness ofthe plurality of first polishing areas is greater than, equal to or lessthan the surface roughness of the second polishing areas.
 3. Thechemical mechanical polishing pad conditioner according to claim 1,wherein the surface roughness of one of the plurality of first polishingareas includes at least two subsets of ranges.
 4. The chemicalmechanical polishing pad conditioner according to claim 1, wherein thesurface roughness of one of the plurality of second polishing areaincludes at least two subsets of ranges.
 5. The chemical mechanicalpolishing pad conditioner according to claim 1, wherein the first tipheight is greater than, equal to or less than the second tip height. 6.The chemical mechanical polishing pad conditioner according to claim 1,wherein the plurality of first polishing tips include at least twosubsets of the first tip heights.
 7. The chemical mechanical polishingpad conditioner according to claim 1, wherein the plurality of secondpolishing tips include at least two subsets of the second tip heights.8. The chemical mechanical polishing pad conditioner according to claim1, wherein the first tip heights are between 5 μm and 300 μm.
 9. Thechemical mechanical polishing pad conditioner according to claim 1,wherein the second tip heights are between 5 μm and 300 μm.
 10. Thechemical mechanical polishing pad conditioner according to claim 1,wherein the plurality of first polishing areas and the plurality ofsecond polishing areas are equal in height.
 11. The chemical mechanicalpolishing pad conditioner according to claim 1, wherein a heightdifference between the plurality of first polishing areas and theplurality of second polishing areas is between 1 μm and 300 μm.
 12. Thechemical mechanical polishing pad conditioner according to claim 1, theshapes of the first polishing areas is trapezoid, sector, circle orpolygon.
 13. The chemical mechanical polishing pad conditioner accordingto claim 1, wherein the first polishing area is formed as a bump, thediamond film overlays the plurality of first polishing areas and forms aplurality of polishing projections over the bumps, two adjacentpolishing projections are separated from each other at a distance, andthe distance is 1 to 5 times of a width of the bump.
 14. The chemicalmechanical polishing pad conditioner according to claim 1, wherein thefirst polishing area is formed as a bump, the diamond film overlays thefirst polishing areas and forms a plurality of polishing projectionsalong the bumps, and the plurality of polishing projections are formedin an arc shape with respect to a radial direction of the intermediatesubstrate.
 15. The chemical mechanical polishing pad conditioneraccording to claim 1, wherein the first polishing area is formed as abump, the diamond film overlays the first polishing areas and forms aplurality of polishing projections over the bumps, the polishingprojection includes a top surface and a plurality of three-dimensionalgeometrical structures formed on the top surface and arranged regularlyor irregularly.
 16. The chemical mechanical polishing pad conditioneraccording to claim 15, wherein a number of the geometrical structuresper square millimeter on each of the plurality of polishing projectionis between 10 and
 2500. 17. The chemical mechanical polishing padconditioner according to claim 15, wherein a first distance is providedbetween center points of two adjacent geometrical structures, and thefirst distance is 1 to 8.3 times of a width of the geometricalstructures.
 18. The chemical mechanical polishing pad conditioneraccording to claim 1, wherein the intermediate substrate is made of aconductive material, and the conductive material is selected from agroup consisting of molybdenum, tungsten and tungsten carbide.
 19. Thechemical mechanical polishing pad conditioner according to claim 1,wherein the intermediate substrate is made of a non-conductive material,and the non-conductive material is silicon or monocrystal aluminumoxide.
 20. The chemical mechanical polishing pad conditioner accordingto claim 1, wherein a material of the intermediate substrate isconductive silicon carbide or non-conductive silicon carbide.
 21. Thechemical mechanical polishing pad conditioner according to claim 1,further comprising an adhesive layer arranged between the bottomsubstrate and the intermediate substrate.
 22. The chemical mechanicalpolishing pad conditioner according to claim 1, wherein the firstpolishing area is formed in a single circular shape.
 23. The chemicalmechanical polishing pad conditioner according to claim 1, wherein thefirst polishing areas are formed in a plurality of circles, wherein anumber of the circles is between 2 and
 20. 24. The chemical mechanicalpolishing pad conditioner according to claim 23, wherein the adjacentfirst polishing areas are staggered to one another.
 25. The chemicalmechanical polishing pad conditioner according to claim 1, the bottomsubstrate is a planar substrate, and the intermediate substrate isarranged on the planar substrate.
 26. The chemical mechanical polishingpad conditioner according to claim 1, wherein the bottom substrate isprovided with a annular accommodating groove for receiving theintermediate substrate.
 27. The chemical mechanical polishing padconditioner according to claim 1, wherein the annular portion includes aplurality of separated segments spiced adjacent to each other.
 28. Thechemical mechanical polishing pad conditioner according to claim 27,wherein a number of the segments is between 2 and
 6. 29. The chemicalmechanical polishing pad conditioner according to claim 1, wherein theintermediate substrate is a circular substrate.
 30. The chemicalmechanical polishing pad conditioner according to claim 1, furthercomprising a plurality of polishing units, wherein the polishing unitincludes a supporting rod, a polishing particle arranged on thesupporting rod, and an abrasive bonding layer used for bonding thesupporting rod and the polishing particle.
 31. A manufacturing method ofa chemical mechanical polishing pad conditioner, comprising thefollowing steps: providing an intermediate substrate, wherein theintermediate substrate includes a hollow portion and an annular portionsurrounding the hollow portion, the annular portion includes a pluralityof first polishing areas arranged at intervals along an annular area anda plurality of second polishing areas disposed between the firstpolishing areas, and the first polishing areas extend along a radialdirection on the intermediate substrate; and forming a diamond film onthe intermediate substrate, wherein the diamond film overlays theplurality of first polishing areas and the plurality of second polishingareas, the diamond film is provided with a plurality of first surfacesand a plurality of second surfaces, the plurality of first surfacesoverlay the plurality of first polishing areas, the plurality of secondsurfaces overlay the plurality of second polishing areas, a plurality offirst polishing tips protruding from the first surfaces and a pluralityof second polishing tips protruding from the second surfaces are formedon the diamond film, the first polishing tips have a first tip height,the second polishing tips have a second tip height, the first surfaceshave a surface roughness between 1 μm and 50 μm according to a shape ofthe first polishing tips, and the second surfaces have a surfaceroughness between 1 μm and 50 μm according to a shape of the secondpolishing tips; and arranging the intermediate substrate on a bottomsubstrate.